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Germanium (or sillicon) BJT transistors leakage measuring pr

Posted: 24 Feb 2017, 23:55
by mailoszyarr
Hi,
I was trying to measuring transistors leakage and HFE by this method: http://www.geofex.com/article_folders/ffselect.htm
I have two problems:
1. first reading of voltage is highest, then voltage on multimeter is lowering. I don't know if first or last (after few minutes) reading is right.
2. Even if I get highest valu of voltege, HFE calculating by this method is a half of HFE that shows my multimeter.

What I am doing wrong?

Re: Germanium (or sillicon) BJT transistors leakage measurin

Posted: 25 Feb 2017, 07:36
by boby6kiler
for me it works for pnp but not with npn

Re: Germanium (or sillicon) BJT transistors leakage measurin

Posted: 25 Feb 2017, 16:45
by plush
boby6kiler wrote:for me it works for pnp but not with npn
For npn you simply flip input voltage polarity on both 9v supply and your dmm
mailoszyarr wrote:Hi,
I was trying to measuring transistors leakage and HFE by this method: http://www.geofex.com/article_folders/ffselect.htm
I have two problems:
1. first reading of voltage is highest, then voltage on multimeter is lowering. I don't know if first or last (after few minutes) reading is right.
2. Even if I get highest valu of voltege, HFE calculating by this method is a half of HFE that shows my multimeter.

What I am doing wrong?
1. 1st reading must be measured without the load (2.2mOhm). 2nd reading is done when the load is applied. Second reading is always higher that the first one

2. it's okay, it means that your transistor has a lot of leakage, it confuses your DMM, because it was made for modern silicon transistors, that don't have leakage compared to old germanium.